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Germanium in semiconductor laser applications
					
 Mar 22, 2024 
 2:30PM to 3:30PM

									

				

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							BIMR Seminar flyer Xia (Maggie) Guangrui - All details from the flyer are on the event page.							

															

						

						

	

		
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	Date/Time

	Date(s) - 22/03/2024
2:30 pm - 3:30 pm





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Prof. Guangrui (Maggie) Xia


Dept. of Materials Engineering, University of British Columbia


 


Germanium (Ge) is an indirect band gap semiconductor, usually with poor light emission performance. Due to the small difference between the direct and indirect band gaps of Ge, stress engineering and n-type doping can make it a gain medium for lasers. Ge lasers have excellent compatibility with Si technology and is promising in silicon-compatible optical interconnects. However, Ge lasers are still in their infancy, with many basic questions to investigate. Another use of Ge is as a substrate material for AlGaAs vertical cavity surface emitting lasers, which has been successful in the last three years. 


This report summarizes the recent research and development progress of Ge lasers and Ge-based vertical cavity surface emitting lasers, focusing on the theoretical studies, experimental results and analysis of the two topics from the Xia research group and her collaborators.


 


Bio:


Prof. Guangrui (Maggie) Xia was born in Handan, China. She is currently an associate professor with UBC Materials Engineering (http://mtrl.ubc.ca/faculty/guangrui-xia/). She received her B.S. in Materials Science and Engineering from Tsinghua University, and received M.S. and Ph.D. degrees in Electrical Engineering from Massachusetts Institute of Technology. Before joining UBC, she worked at IBM Semiconductor Research and Development Center, where she led the research of process modeling and simulations for 32 nm node CMOS technologies.


Prof. Xia is an expert in SiGe materials and devices. Her group has a strong existence in the area of SiGe and SiGe:C processing and modeling. Process models from her work have been widely used in practice and implemented in the state-of-the-art semiconductor process simulation tools. In recent years, her research group has been one of the leading groups in Ge lasers and in monolithic III-V laser integration on Si and Ge.


 


 


In-Person: ABB 102


Online: https://mcmaster.zoom.us/j/91811967803


Meeting ID: 918 1196 7803

Passcode: 523146